Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

摘要

Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to12 nm have been fabricated by electron beam lithography using a wafer-scalechemical vapor deposition (CVD) process to form the graphene. The GNR FETs showdrain-current modulation of approximately 10 at 300 K, increasing to nearly 106at 4 K. The strong temperature dependence of the minimum current indicates theopening of a bandgap for CVD-grown GNR-FETs. The extracted bandgap is estimatedto be around 0.1 eV by differential conductance methods. This work highlightsthe development of CVD-grown large-area graphene and demonstrates the openingof a bandgap in nanoribbon transistors.